charge vt. 1.填;装(子弹);充(电);使饱和;使充满;堆积,装载。 2.命令;促;谕示,指令。 3.责备;告诫。 4.使承担(责任)。 5.把…归咎于 (to, on, upon);告发,在控告 (with)。 6.要求收(费);索(价);课(税)。 7.为…支出;在(账)上记入…,记入…账内[名下]。 8.【军事】向…进击,袭击。 charge a pen (钢笔)上墨水。 a charging machine 装料机。 air charged with moisture 充满潮气的空气。 charge sb. with theft 以窃盗罪控告某人,控告某人行窃。 I shall charge you five dollars. 我要你付五元。 charge a tax on ...对…征税。 I charged him to see that all was right. 托他妥为照料。 vi. 1.收费,要价。 2.【军事】冲锋,向前冲。 He charges high for it. 他对之要高价。 charge and cheer 一边冲锋一边呐喊。 C- bayonet! 上刺刀!〔冲锋前的号令〕。 charge off 【会计】(在账簿中)注销(损失等),报损。 charge off ... to 把…归于某一项[看作某事的一部分]。 charge oneself with 负起…的责任,承担。 charge to sb.'s account 记入某人账下( C- these cigars to my account [against me]. 这些雪茄烟请算在我账里)。 charge (sb.) with 托付,使…负担;使负…的罪名,认为有…的嫌疑;使受…的责备。 n. 1.负荷,装载物;(火器的)装填;充气;充电,电荷;(一定量的)炸药。 2.保护,监督,管理。 3.责任;义务,任务。 4.委托,委托物。 5.命令,指令。 6.控诉;告发;指责;嫌疑;罪状,罪过。 7.〔常 pl. 〕费用;捐税;代价;记账。 8.【军事】冲锋,进击;冲锋号;【足球】截住对方攻球,阻住对方前进;(猛兽的)袭击。 9.〔美俚〕快感,刺激。 10.【徽章】(盾上)图形,图案。 11.〔pl.〕〔美国〕棒球队队员。 12.〔口语〕麻醉剂,毒品。 a bursting charge炸药。 a rocket charge火箭火药柱。 The books are under my charge.这些书归我保管。 a carrying charge维修费。 a false charge诬告。 a terminal charge(给用户的)结算。 sound the charge吹冲锋号。 at moderate charges 以公道的代价。 at one's own charge 自费。 charge for trouble 手续费。 charge of sheer bone and muscle 肉搏战。 charges forward 运费等货到后由收货人自付。 charge of quarters 营舍值班(士官)。 charges paid 各费付讫。 free of charge 免费。 give in charge 寄存,委托(某物给某人);交付(犯人给警察)。 have charge of 承受,承担。 in charge 主任[主管]( the doctor in charge主任医师)。 in charge of 主持,领导,管理[处理]…的,看管…的,受托…的 (the nurse in charge of the child 照管孩子的保姆)。 in full charge 负全责;猛然,突然。 in [under] the charge of 在…看护下的,交…照看的( the child in the charge of the nurse 交保姆照看的孩子)。 lay to sb.'s charge 归罪于,指控(某人)。 make a charge against 责备;袭击;控告。 no charge for admission 免费入场。 on (a) charge of 以…罪控告。 on the charge of 因…的嫌疑。 put in charge of 委托。 return to the charge 再重新进攻;改变(意见等)。 take charge 掌管;〔俚语〕(事物)控制不住,弄糟。 take charge of 担任,保管,看守,看管,监督,负责。 take over charge of 承受,接办。 take personal charge 亲自处理[照管]。
interface charge has a profound influence on the breakdown voltage of flr structure . on severe condition it can make the outer flr far from main junction disfunction 界面电荷对场限环终端结构的击穿电压影响很大,严重的甚至可以使远离主结的场限环失去作用。
The breakdown mechanism of soi ldmos with located charge trenches was analyzed in this thesis . the interface charge model for the breakdown voltage was proposed 本课题分析具有局域电荷槽结构的soildmos的纵向耐压机理,提出界面电荷耐压模型,这是迄今为止所见报道的高压soi器件理想的新模型。
It was thought that zno buffer layer eliminates the imbalance of interface charge and weaken the thermal stress, so that the dislocation between wide band-gap ii-vi materials and si substrate would be decreased 认为由于zno的存在消除了电荷不匹配以及减少热应力对在si衬底上生长宽带-族半导体材料带来的影响从而减少界面间的缺陷的产生。
With offset fp structure obtained by using our method the device breakdown voltage is higher than flr structure, and this structure can screen the influence of interface charge in part and improve the stability of device performance 用我们的方法设计的偏移场板结构不仅比场限环结构提高了击穿电压,而且部分地屏蔽了界面电荷对器件击穿电压的影响,提高了器件工作性能的稳定性。
The distributions of interface charge in the bottom of trenches and electric field in insulation layer were studied for the novel structure . the influences of insulation layer thickness and trench width on breakdown voltage were analyzed and compared with analytical results 利用器件二维数值仿真软件medici,详细研究局域电荷槽内的电荷分布和埋二氧化硅层的电场分布,以及埋二氧化硅厚度和槽宽对耐压的影响。
During the high-voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched . this device used piecewise vld and multiple region structure f reduce field layer . the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss 在高压器件研究中对与现有工艺相兼容厚外延ldmos进行研究,该结构采用分段变掺杂多区p~-降场层,有效降低器件的表面电场,缩短器件的漂移区长度,增大p~-降场层注入剂量的选择范围,并有效地抑制界面电荷qss对器件耐压的不利影响。